absolute maximum ratings ( t j = 25c unless otherwise specified ) symbol parameter condition ratings units v drm repetitive peak off-state voltage sine wave,50 to 60hz 600 v i t(rms) r.m.s on-state current 180 conduction angle 5 a i tsm surge on-state current 1/2 cycle, 60hz, sine wave non-repetitive 36 a p gm forward peak gate power dissipation t j = 1 10 c 1 w p g(av) forward average gate power dissipation t j = 1 10 c 0.1 w i fgm forward peak gate current t j = 1 10 c 1 a t j operating junction temperature - 40 ~ 125 c t stg storage temperature - 40 ~ 150 c cd 6c60s june, 20 10 . rev. 1 1/5 features repetitive peak off-state voltage : 600v r.m.s on-state current ( i t(rms) = 5 a ) non-isolated to-252 package general description apollo electrons scr is suitable for the application where requiring high bidirectional blocking voltage capability and also suit able for over voltage protection, mo tor control circuit in power tool, inrush cur- rent limit circuit and heating control system. 2. anode 3.gate 1.cathode symbol i t(rms) = 5a i tsm = 36a bv drm = 600v sensitive gate silicon controlled rectifiers to-252 1 2 3 copyright @ apollo electron co., ltd. all rights reserved.
electrical characteristics ( t j = 25 c unless otherwise noted ) symbol items conditions ratings unit min. typ. max. i drm repetitive peak off-state current v ak = v drm t j = 125 c 1 0 0 ua v tm peak on-state voltage (1) i t = 4 a 1.4 v i gt gate trigger current (2) v ak =12 v(dc), r l =100 200 ua v gt gate trigger voltage (2) v d = 1 2 v(dc), r l =100 1.2 v v gd non-trigger gate voltage (1) v ak = 12 v, r l =100 t j =1 25 c 0.1 v dv/dt critical rate of rise off-state voltage linear slope up to v d = v drm 67% , gate open t j = 1 25c 10 v/us i h holding current vd=24v, igt=50ma 5 ma 2/5 cd 6c60s
10 -2 10 -1 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 i gm (1 a) v gd (0.1v) p g(av) (0.1w) p gm (0.5w) v gm (5v) 25 o c gate voltage [v] gate current [ma] -50 0 50 100 150 0.1 1 10 i gt (t o c) i gt (25 o c) junction temperature[ o c] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 10 1 transient thermal impedance [ o c/w] time (sec) 0.51.01.52.02.53.03.54.0 1 10 100 125 o c 25 o c on-state current [a] on-state voltage [v] 01234 40 60 80 100 120 140 angle = 180 o max. allowable case temperature [ o c] average on-state current [a] : conduction angl e 360 2 cd 6c60s -50 0 50 100 150 0.1 1 10 v gt (t o c) v gt (25 o c) junction temperature[ o c] 3/5 fig 1. gate characteristics fig 2. maximum case temperature fig 3. typical forward voltage fig 4. thermal response fig 6. typical gate trigger current vs. junction temperature fig 5. typical gate trigger voltage vs. junction temperature
01234 0 1 2 3 4 5 6 7 = 180 o = 120 o = 90 o = 60 o = 30 o max. average power dissipation [w] average on-state current [a] -50 0 50 100 150 0.1 1 10 i h (t o c) i h (25 o c) junction temperature[ o c] 4/5 cd 6c60s fig 8. power dissipation fig 7. typical holding current
5/5 cd6c60s to-252 package dimension min. typ. max. min. typ. max. a 2.20 2.3 2.40 0.087 0.0905 0.094 b 1.30 1.4 1.50 0.051 0.055 0.059 b 0.55 0.6 0.65 0.022 0.024 0.026 b1 0.46 0.51 0.56 0.018 0.02 0.022 c 0.46 0.51 0.56 0.018 0.02 0.022 d 6.40 6.5 6.60 0.252 0.256 0.260 d1 5.20 5.3 5.40 0.205 0.2085 0.212 e 5.40 2.285 5.60 0.212 0.09 0.220 e1 2.25 2.3 2.35 0.089 0.091 0.093 e2 4.50 4.6 4.70 0.177 0.181 0.185 l1 9.25 9.5 9.75 0.346 0.365 0.384 l2 0.95 1.2 1.45 0.037 0.047 0.057 milimeters inches symb ol
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